2005. 4. 21 1/3 semiconductor technical data KTC4075F epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h high h fe : h fe =70~700. h low noise : nf=1db(typ.), 10db(max.). h complementary to kta2014f. h thin fine pitch small package. maximum rating (ta=25 ? ) dim millimeters a e a g k d j c b b d e tfsm 0.6 0.05 0.8 0.05 0.38+0.02/-0.04 0.2 0.05 1.0 0.05 0.35 0.05 0.1 0.05 c g j k 0.15 0.05 + _ + _ + _ + _ + _ + _ + _ 2 1 3 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 50 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 70 - 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma, f=1khz, rg=10k ? - 1.0 10 db note : h fe classification o(2):70 q 140, y(4):120 q 240, gr(6):200 q 400, bl(8):350~700 fffffff f bz
2005. 4. 21 2/3 KTC4075F revision no : 0 c collector current i (ma) 0 40 30 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i v - i c collector current i (ma) 0.1 0.1 base-emitter saturation base current i ( a) b 0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) 0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation 0.01 0.1 collector current i (ma) c v - i 12345 67 80 120 160 200 240 i =0.2ma b common emitter ta=25 c fe c 10 30 100 300 50 100 300 500 1k ce(sat) c voltage v (v) ce(sat) 0.3 1 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) 0.3 1 10 30 100 300 3 0.3 0.5 1 3 5 10 common emitter i /i =10 ta=25 c c b tc 0.3 1 3 10 30 100 300 30 50 100 300 500 1k common emitter v =10v ta=25 c ce b be 0.2 0.4 0.6 0.8 1.0 1.2 1 3 10 30 100 300 1k 0.5 0 1.0 2.0 3.0 5.0 6.0 10 common emitter ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v 3k common emitter v =6v ce ta=1 00 c ta=25 c ta =-25 c
2005. 4. 21 3/3 KTC4075F revision no : 0 h parameter 0.1 10 3 1 0.5 collector-emitter voltage v (v) ce h parameter - v h parameter - i c collector current i (ma) 0.1 1 3 0.1 h parameter c 10 30 50 0.5 5 0.3 0.5 1 3 5 10 30 50 100 300 500 1k 2k common emitter v =12v, f=270hz ta=25 c ce bl gr y o h fe bl gr y o bl gr y o bl gr y o ie h x k ? ie h x k ? h x oe h x 10 re -4 h x 10 re -4 ce 30 100 300 0.3 1 3 10 30 100 300 1k 2k bl gr y o h fe bl gr y o bl gr y o bl gr y o common emitter i =2ma, ta=25 c c ? h x oe ? collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 25 50 75 100 150
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